inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB975 description high dc current gain- : h fe = 2000(min)@ i c = - 3a low collector-emitter saturation voltage- : v ce(sat) = -1.5v(max)@ i c = - 3a complement to type 2sd1309 applications designed for audio frequency power amplifier and low-speed switching industrial use. absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -7 v i c collector current-continuous -8 a i cm collector current-peak -12 a i b b base current-dc -0.8 a collector power dissipation t c =25 40 p c collector power dissipation t a =25 1.5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB975 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = -3a, i b = -3ma b -1.5 v v be( sat ) base-emitter saturation voltage i c = -3a, i b = -3ma b -2.0 v i cbo collector cutoff current v cb = -100v, i e = 0 -1.0 a i ebo emitter cutoff current v eb = -7v; i c = 0 -5 ma h fe-1 dc current gain i c = -3a; v ce = -2v 2000 15000 h fe-2 dc current gain i c = -5a; v ce = -2v 500 switching times t on turn-on time 0.5 s t stg storage time 1.0 s t f fall time r l = 16.7 , v cc -50v i c = -3a; i b1 = -i b2 = -3ma 1.0 s ? h fe- 1 classifications m l k 2000-5000 3000-7000 5000-15000 isc website www.iscsemi.cn
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